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april 2008 rev 6 1/16 16 stfv4n150 - STFW4N150 stp4n150 - stw4n150 n-channel 1500 v - 5 ? - 4 a - powermesh? power mosfet to-220 - to-220fh - to-247 - to-3pf features 100% avalanche tested intrinsic capacitances and qg minimized high speed switching fully isolated to-3pf and to-220fh plastic packages creepage distance path is 5.4 mm (typ.) for to-3pf creepage distance path is > 4 mm for to-220fh application switching applications description using the well consolidated high voltage mesh overlay? process, stmicroelectronics has designed an advanced family of very high voltage power mosfets with outstanding performances. the strengthened layout coupled with the company?s proprietary edge termination structure, gives the lowest r ds(on) per area, unrivalled gate charge and switching characteristics. figure 1. internal schematic diagram. type v dss r ds(on) max i d stfv4n150 STFW4N150 (1) stp4n150 stw4n150 1. all data which refers solely to the to-3pf package is preliminary 1500 v 1500 v 1500 v 1500 v < 7 ? < 7 ? < 7 ? < 7 ? 4 a 4 a 4 a 4 a to-220 to-247 1 2 3 1 2 3 1 2 3 to-3pf 1 2 3 to-220fh table 1. device summary order codes marking package packaging stfv4n150 4n150 to-220fh tube STFW4N150 4n150 to-3pf tube stp4n150 p4n150 to-220 tube stw4n150 w4n150 to-247 tube www.st.com
contents stfv4n150 - STFW4N150 - stp4n150 - stw4n150 2/16 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 electrical ratings 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fh to-3pf v ds drain-source voltage (v gs = 0) 1500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 444 (1) 4 (1) a i d drain current (continuous) at t c = 100 c 2.5 2.5 2.5 (1) 2.5 (1) a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 12 12 12 (1) 12 (1) a p tot total dissipation at t c = 25 c 160 40 tbd w t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fh to-3pf r thj-case thermal resistance junction-case max 0.78 3.12 tbd c/w r thj-amb thermal resistance junction- ambient max 62.5 50 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 350 mj
electrical characteristics stfv4n150 - STFW4N150 - stp4n150 - stw4n150 4/16 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 1500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 10 500 a a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on static drain-source on resistance v gs = 10 v, i d = 2 a 57 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300 s, duty cycle 1.5% forward transconductance v ds = 30 v, i d = 2 a 3.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 1300 120 12 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 750 v, i d = 2 a, r g = 4.7 ?, v gs = 10 v (see figure 21) 35 30 45 45 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 600 v, i d = 4 a, v gs = 10 v (see figure 22) 30 10 9 50 nc nc nc
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 electrical characteristics 5/16 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 4 12 a a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 4 a, v gs = 0 2v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a, di/dt = 100a/s v dd = 45v (see figure 21) 510 3 12 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a, di/dt = 100 a/s v dd = 45v, t j = 150c (see figure 21) 615 4 12.6 ns c a
electrical characteristics stfv4n150 - STFW4N150 - stp4n150 - stw4n150 6/16 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fh figure 5. thermal impedance for to-220fh figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 electrical characteristics 7/16 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations
electrical characteristics stfv4n150 - STFW4N150 - stp4n150 - stw4n150 8/16 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs temperature
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 test circuits 9/16 3 test circuits figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching times test circuit for resistive load figure 22. gate charge test circuit figure 23. test circuit for inductive load switching and diode recovery times figure 24. switching time waveform
package mechanical data stfv4n150 - STFW4N150 - stp4n150 - stw4n150 10/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 package mechanical data 11/16 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stfv4n150 - STFW4N150 - stp4n150 - stw4n150 12/16 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 package mechanical data 13/16 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.17 3 0.1 8 1 b 2.5 2.7 0.09 8 0.106 d 2.5 2.75 0.09 8 0.10 8 e 0.45 0.7 0.017 0.027 f 0.75 1 0.0 3 00.0 3 9 f1 1. 3 1. 8 0.051 0.070 f2 1. 3 1. 8 0.051 0.070 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0. 3 9 3 0.409 l2 16 0.6 3 0 l 3 2 8 .6 3 0.6 1.126 1.204 l4 9. 8 10.6 0. 38 50.417 l5 3 .4 0.1 3 4 l6 15.9 16.4 0.626 0.645 l7 9 9. 3 0. 3 54 0. 3 66 l 8 14.5 15 0.570 0.590 l9 2.4 0.094 p011w to-220fh (fully pla s tic hi g h volta g e) mechanical data
package mechanical data stfv4n150 - STFW4N150 - stp4n150 - stw4n150 14/16 dim. mm. min. typ max. a5. 3 0 5.70 c2. 8 0 3 .20 d 3 .10 3 .50 d1 1. 8 0 2.20 e0. 8 0 1.10 f 0.65 0.95 f2 1. 8 0 2.20 g 10. 3 0 11.50 g1 5.45 h 15. 3 0 15.70 l9. 8 0 10 10.20 l2 22. 8 02 3 .20 l 3 26. 3 0 26.70 l4 4 3 .20 44.40 l5 4. 3 0 4.70 l6 24. 3 0 24.70 l7 14.60 15 n1. 8 0 2.20 r 3 . 8 0 4.20 di a3 .40 3 . 8 0 to- 3 pf mechanical data 76271 3 2_c
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 revision history 15/16 5 revision history table 8. document revision history date revision changes 29-mar-2005 1 initial release 07-jul-2005 2 removed to-220fp 07-oct-2005 3 document status promoted from preliminary data to datasheet 10-aug-2006 4 document reformatted, no content change 06-nov-2007 5 updated unit on table 5: on/off states 09-apr-2008 6 added new packages: to-220fh, to-3pf
stfv4n150 - STFW4N150 - stp4n150 - stw4n150 16/16 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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